Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
H-bridge driver IC for MOSFET power stages with multiple protection functions.
TLE6281G Maximum Ratings
Parameter
Symbol
Limits Values
Unit
Min.
Max.
Supply voltage 1
VS
-4
60
V
Operating temperature range Storage temperature range
Tj Tstg
-40 -55
150 150
Max. voltage range at PWM, DIR, DT/DIS
-1
6
V
Max. voltage range at ERx
-0.3
6
V
Max. voltage range at INH
VINH
-0.6
60
V
Max. voltage range at BHx
VBHX
-0.3
90
V
Max. voltage range at DHx2
VDHX
-4
75
V
Max. voltage range at GHx3
VGHX
-6.8
86
V
Max. voltage range at SHx3
VSHX
-6.8
75
V
Max. voltage range at GLx
VGLX
-2
12
V
Max. voltage range at SLx
VSLX
-2
7
V
Max. voltage difference BHx SHx
VBHX-VSHX
-0.3
17
V
Max. voltage difference Gxx Sxx
VGXX-VSXX
-0.3
11
V
Power dissipation (DC) @ TA=125 / min.footprint
Ptot
0.33
W
Power dissipation (DC) @ TA=85 / min.footprint
Ptot
0.85
W
Electrostatic discharge voltage (Human Body Model)according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 1993
VESD4
2
kV
Jedec Level
3
Thermal resistance junction - ambient (minimal footprint with thermal vias)
RthJA
75
K/W
Thermal resistance junction - ambient (6 cm2)
RthJA
75
K/W
1 With external resistor (10 ) and capacitor 2 The min value -4V is reduced to ( VBHx - VSHx) in case of bootstrap voltages VBHx-VSHx <4V 3 The min value -7V is reduced to (VBHx - VSHx - 1V) in case of bootstrap voltages VBHx-VSHx <8V 4 All test involving Gxx pins VESD=1 kV!
TLE6281G Features
• Compatible to very low ohmic normal level input N-Channel MOSFETs • PWM DIR - Interface • PWM frequency up to 50kHz • Operates down to 7.5V supply voltage • Low EMC sensitivity and emission • Adjustable dead time with shoot through protection • Deactivation of dead time and shoot through protection possible • Short circuit protection for each Mosfet • Driver undervoltage shut down • Reverse polarity protection for the driver IC • Fast disable function / Inhibit for low quiescent current • Input with TTL characteristics • 2 bit diagnosis • Thermal overload warning for driver IC • Shoot through protection • Integrated bootstrap diodes
TLE6281G Typical Application
• Dedicated for DC-brush high current motor bridges in PWM control mode for 12, 24 and 42V powernet applications. • The input structure allows an easy control of a DC-brush motor
TLE6281G Connection Diagram
TLE6282G Parameters
Technical/Catalog Information
TLE6282G
Vendor
Infineon Technologies
Category
Integrated Circuits (ICs)
Applications
DC Motor Driver
Number of Outputs
4
Voltage - Supply
7.5 V ~ 60 V
Voltage - Load
-
Current - Output
-
Operating Temperature
-40°C ~ 150°C
Package / Case
DSO-20
Packaging
Tape & Reel (TR)
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
TLE6282G TLE6282G
TLE6282G General Description
Dual half bridge driver IC for MOSFET power stages with multiple protection functions.
TLE6282G Maximum Ratings
Parameter
Symbol
Limits Values
Unit
Supply voltage 1
VS
-4
60
V
Operating temperature range Storage temperature range
Tj Tstg
-40 -55
150 150
Max. voltage range at Ixx; DT/DIS
-1
6
V
Max. voltage range at ERR
-0.3
6
V
Max. voltage range at BHx
VBHx
-0.3
90
V
Max. voltage range at DHx2
VDHx
-4
75
V
Max. voltage range at GHx3
VGHx
-7
86
V
Max. voltage range at SHx3
VSHx
-7
75
V
Max. voltage range at DLx
VDLx
-7
75
V
Max. voltage range at GLx
VGLx
-2
12
V
Max. voltage difference BHx - SHx
VBHx-VSHx
-0.3
17
V
Max. voltage difference GHx SHx; GLx
VGxx-VSxx
-0.3
11
V
Power dissipation (DC) @ TA=125°C / min.footprint
Ptot
0.33
W
Power dissipation (DC) @ TA=85°C / min.footprint
Ptot
0.85
W
Electrostatic discharge voltage (Human Body Model) according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 1993
VESD4
2
kV
Jedec Level
3
Thermal resistance junction - ambient (minimal footprint with thermal vias)
RthJA
75
K/W
Thermal resistance junction - ambient (6 cm2)
RthJA
75
K/W
TLE6282G Features
• Compatible to very low ohmic normal level input N-Channel MOSFETs • Separate input for each MOSFET • PWM frequency up to 50 kHz • Operates down to 7.5V supply voltage • Low EMC sensitivity and emission • Adjustable dead time with shoot through protection • Deactivation of dead time and shoot through protection possible • Short circuit protection for each Mosfet • Driver undervoltage shut down • Reverse polarity protection for the driver IC • Disable function • Input with TTL characteristics • 1 bit diagnosis • Integrated bootstrap diodes
TLE6282G Typical Application
• Dedicated for DC-brush high current motor bridges in PWM control mode and adapted for use in injector and valve applications for 12, 24 and 42V powernet applications. Useable as four fold lowside driver for unipolar 4 phase motor drives. • The two half bridges can operate independently. The two half bridges can even operate at different supply voltages.