TLN105B, TLN108, TLN110 Selling Leads, Datasheet
MFG:N/A Package Cooled:NA/ D/C:09+
TLN105B, TLN108, TLN110 Datasheet download
Part Number: TLN105B
MFG: N/A
Package Cooled: NA/
D/C: 09+
TLN105B, TLN108, TLN110
- Table of contents:
Info of TLN105B
Info of TLN108
Info of TLN110
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About TLN105B
PDF/DataSheet Download
Datasheet: TLN105B
File Size: 298181 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About TLN108
PDF/DataSheet Download
Datasheet: TLN108
File Size: 242923 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About TLN110
PDF/DataSheet Download
Datasheet: TLN110
File Size: 295449 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
TLN105B Maximum Ratings
| Characteristic | Symbol | Rating | Unit |
| Forward current | IF | 100 | mA |
| Forward current derating (Ta>) | IF/C | −1.33 | mA/ |
| Pulse forward current (Note) | IFP | 1 | A |
| Reverse voltage | VR | 5 | V |
| Power dissipation | PD | 150 | mW |
| Operating temperature | Topr | −20~75 | |
| Storage temperature | Tstg | −30~100 |
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
(Note): Pulse width 100s, repetitive frequency = 100 Hz
TLN108 Maximum Ratings
| Characteristic |
Symbol |
Rating |
Unit |
| Forward current |
IF |
100 |
mA |
| Forward current derating (Ta > 25) |
IF / |
−1 |
mA / |
| Pulse forward current (Note 1) |
IFP |
1 |
A |
| Reverse voltage |
VR |
5 |
V |
| Operating temperature range |
Topr |
−40~125 |
|
| Storage temperature range |
Tstg |
−55~150 |
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook ("Handling
Precautions"/"Derating Concept and Methods") and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Pulse width 100s, repetitive frequency = 100 Hz
TLN108 Features
• TO−18 metal package
• High radiant intensity: IE = 20 mW/sr (typ.)
• Excellent radiant−intensity linearity. Modulation by pulse operation
and high frequency is possible.
• Highly reliable due to hermetic seal
• High radiant intensity: IE = 20 mW/sr (typ.)
• Excellent radiant−intensity linearity. Modulation by pulse operation
and high frequency is possible.
• Highly reliable due to hermetic seal
TLN110 Maximum Ratings
| Characteristic | Symbol | Rating | Unit |
| Forward current | IF | 100 | mA |
| Forward current derating (Ta > 25) | IF / | -1.33 | mA/ |
| Pulse forward current | IFP (Note 1) | 1 | A |
| Reverse voltage | VR | 5 | V |
| Power dissipation | PD | 150 | mW |
| Operating temperature range | Topr | −20~75 | |
| Storage temperature range | Tstg | −30~100 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Pulse width 100s, repetitive frequency = 100 Hz
TLN110 Features
• High radiant intensity: IE = 30mW / sr (typ.)
• Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible.
• TPS703(F) PIN photodiode with resin to screen out visible light available as detector for remote control
• Excellent radiant−intensity linearity. Modulation by pulse operation and high frequency is possible.
• TPS703(F) PIN photodiode with resin to screen out visible light available as detector for remote control
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