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TN6705A, TN6707A, TN6714A

Table of contents:
Info of TN6705A
Info of TN6707A
Info of TN6714A

TN6705A, TN6707A, TN6714A Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:05+

TN6705A, TN6707A, TN6714A Datasheet download

Five Points

Part Number: TN6705A

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 05+

Description: TRANS GP NPN 30V 2A TO-226

Price Break

1500

Unit Price

.11520

Extended Price

172.80

(All prices are in USD) Prices for reference only

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TN6705A Parameters

Technical/Catalog Information	TN6705A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	1.5A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 250mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-226
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TN6705A TN6705A

TN6705A Maximum Ratings

Symbol	Parameter	Value	Units
V_CEO	Collector-Emitter Voltage	45	V
V_CBO	Collector-Base Voltage	60	V
V_EBO	Emitter-Base Voltage	5.0	V
I_C	Collector Current - Continuous	1.5	mA
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C..
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

TN6707A Parameters

Technical/Catalog Information	TN6707A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	1.2A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 250mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-226
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TN6707A TN6707A

TN6707A Maximum Ratings

Symbol	Parameter	Value	Units
V_CEO	Collector-Emitter Voltage	80	V
V_CBO	Collector-Base Voltage	100	V
V_EBO	Emitter-Base Voltage	5.0	V
I_C	Collector Current - Continuous	1.2	mA
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

TN6714A Parameters

Technical/Catalog Information	TN6714A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	2A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 1A, 1V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-226
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TN6714A TN6714A

TN6714A Maximum Ratings

Symbol	Parameter	Value	Unit
V_CEO	Collector-Emitter Voltage	30	V
V_CBO	Collector-Base Voltage	40	V
V_EBO	Emitter-Base Voltage	5.0	V
I_C	Collector Current - Continuous	2.0	A
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

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