TN6707A

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 80 V
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Maximum Operating Frequency : 50 MHz
Maximum DC Collector Current : 1.2 A
Package / Case : TO-226


Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	80	V
VCBO	Collector-Base Voltage	100	V
VEBO	Emitter-Base Voltage	5.0	V
IC	Collector Current - Continuous	1.2	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Parameters:

Technical/Catalog Information	TN6707A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	1.2A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 250mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-226
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TN6707A TN6707A