TP2635, TP2640, TP2640LG Selling Leads, Datasheet
MFG:N/A Package Cooled:NA/ D/C:09+
TP2635, TP2640, TP2640LG Datasheet download
Part Number: TP2635
MFG: N/A
Package Cooled: NA/
D/C: 09+
MFG:N/A Package Cooled:NA/ D/C:09+
TP2635, TP2640, TP2640LG Datasheet download
MFG: N/A
Package Cooled: NA/
D/C: 09+
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PDF/DataSheet Download
Datasheet: TP2635
File Size: 468733 KB
Manufacturer: SUTEX [Supertex, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TP2640
File Size: 468733 KB
Manufacturer: SUTEX [Supertex, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TP2640LG
File Size: 468733 KB
Manufacturer: SUTEX [Supertex, Inc]
Download : Click here to Download
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Drain-to-Source Voltage |
BVDSS |
Drain-to-Gate Voltage |
BVDGS |
Gate-to-Source Voltage |
± 20V |
Operating and Storage Temperature |
-55°C to +150°C |
Soldering Temperature* |
300°C |
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Drain-to-Source Voltage |
BVDSS |
Drain-to-Gate Voltage |
BVDGS |
Gate-to-Source Voltage |
± 20V |
Operating and Storage Temperature |
-55°C to +150°C |
Soldering Temperature* |
300°C |