TP2010L

The TP2010L is designed as one kind of P-channel enhancement-mode mos transistors and is produced by Siliconix.The absolute maximum ratings of the TP2010L can be summarized as:(1)drain-source voltage:-200 V;(2)gate-source voltage:+/-20 V;(3)continuous drain current(Ta=25):-0.18 A;(4)continuous drain current(Ta=100):-0.11 A;(5)pulsed drain current:-0.72 A;(6)maximum power dissipation:(Ta=25):0.80 W;(7)maximum power dissipation:(Ta=100):0.32 W;(8)operating junction & storage temperature range:-55 to 150;(9)lead temperature:300;(10)junction-to-ambient:156 K/W;(11)drain-source breakdown voltage:-220 V;(12)gate threshold voltage:-1.9 V;(13)gate-body leakage:+/-10 nA or +/150 nA.

If you want to know more information about TP2010L,please download the datasheet in www.seekic.com and www.chinaicmart.com .