TP2033

Features: SpecificationsDescriptionThe TP2033 is designed as one kind of VHF power transistor,it has been specifically designed and characterized for 12.5 V operation in 225 MHz high power amplifiers.Its construction which incorporates gold metallization and diffused ballast resistors enables the ...

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SeekIC No. : 004525790 Detail

TP2033: Features: SpecificationsDescriptionThe TP2033 is designed as one kind of VHF power transistor,it has been specifically designed and characterized for 12.5 V operation in 225 MHz high power amplifier...

floor Price/Ceiling Price

Part Number:
TP2033
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:






Specifications






Description

The TP2033 is designed as one kind of VHF power transistor,it has been specifically designed and characterized for 12.5 V operation in 225 MHz high power amplifiers.Its construction which incorporates gold metallization and diffused ballast resistors enables the part to withstand infinite VSWR at all phase angles at rated output power.It can be operated under class A,B or C.

Features of the TP2033 are:(1)30 W;(2)high gain:10 dB min @ 175 MHz,9 dB min @ 225 MHz;(3)12.5 V-Vcc;(4)gold metallization for reliability.And the absolute maximum ratings of the TP2033 are:(1)collector-emitter voltage:16 Vdc;(2)collector-base voltage:36 Vdc;(3)emitter-base voltage:4 Vdc;(4)collector current-continuous:8 Adc;(5)total device dissipation @ Tc=25:80 watts;(6)derate above 25:0.46 W/;(7)operating junction temperature:200;(8)storage temperature range:-65 to +200;(9)thermal resistance,junction to case:2.2 /W;(10)collector-emitter breakdown voltage(Ic=50 mA,Ib=0):16 Vdc;(11)collector-base breakdown voltage(Ic=50 mA,Ie=0):36 Vdc;(12)emitter-base breakdown voltage(Ie=5 mA,Ic=0):4 Vdc;(13)collector cutoff current(Vce=15 V,Vbe=0):10 mAdc;(14)DC current gain:20 to 150;(15)output capacitance:70 to 100 pF.






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