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TPIC46L03DB, TPIC5201KC, TPIC5223L

Table of contents:
Info of TPIC46L03DB
Info of TPIC5201KC
Info of TPIC5223L

TPIC46L03DB, TPIC5201KC, TPIC5223L Selling Leads, Datasheet

MFG:Texas Instruments Category:Integrated Circuits (ICs) Package Cooled:28SSOP D/C:08.09+

TPIC46L03DB, TPIC5201KC, TPIC5223L Datasheet download

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Part Number: TPIC46L03DB

Category: Integrated Circuits (ICs)

MFG: Texas Instruments

Package Cooled: 28SSOP

D/C: 08.09+

Description: IC DRIVER PRE FET 6 CHAN 28-SSOP

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TPIC46L03DB Parameters

Technical/Catalog Information	TPIC46L03DB
Vendor	Texas Instruments
Category	Integrated Circuits (ICs)
Configuration	Low-Side
Voltage - Supply	4.5 V ~ 5.5 V
Current - Peak	1.2mA
Delay Time	4s
Package / Case	28-SSOP
Packaging	Tube
Number of Outputs	6
Input Type	Non-Inverting
Number of Configurations	6
Operating Temperature	-40°C ~ 125°C
High Side Voltage - Max (Bootstrap)	-
Drawing Number	296; 4040065; DB; 14, 16, 20, 24, 28, 30, 38
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	TPIC46L03DB TPIC46L03DB 296 10871 5 ND 296108715ND 296-10871-5

TPIC5223L General Description

The TPIC5223L is a monolithic gate-protected logic-level power DMOS array that consists of two electrically isolated independent N-channel enhancement-mode DMOS transistors. Each transistor features integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body model of a 100-pF capacitor in series with a 1.5-kW resistor.

The TPIC5223L is offered in a standard eight-pin small-outline surface-mount (D) package and is characterized for operation over the case temperature of 40°C to 125°C.

TPIC5223L Maximum Ratings

Drain-to-source voltage, V_DS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 V
Source-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . 100 V
Drain-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 V
Gate-to-source voltage range, V_GS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 V to 18 V
Continuous drain current, each output, T_C= 25    . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 A
Continuous source-to-drain diode current, T_C= 25   . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 A
Pulsed drain current, each output, Imax, T_C = 25   (see Note 1 and Figure 15) . . . . . . . . 3 A
Continuous gate-to-source zener diode current, T_C = 25   . . . . . . . . . . . . . . . . . . . . ±50 mA
Pulsed gate-to-source zener-diode current, T_C = 25   . . . . . . . . . . . . . . . . . . . . . . .±500 mA
Single-pulse avalanche energy, EAS, T_C = 25   (see Figures 4 and 16) . . . . . . . . . . . . 108 mJ
Continuous total power dissipation, T_C = 25   (see Figure 15) . . . . . . . . . . . . . . . . . . 0.95 W
Operating virtual junction temperature range, T_J . . . . . . . . . . . . . . . . . . . . . . .40   to 150
Operating case temperature range, T_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40   to 125
Storage temperature range, T_stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65   to 150
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . .260

NOTE 1: Pulse duration = 10 ms, duty cycle = 2%

TPIC5223L Connection Diagram

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