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High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
TSAL7600 Maximum Ratings
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
VS
5
V
Forward Current
IF
100
mA
Peak Forward Current
tp/T = 0.5, tp = 100 s
IFM
200
mA
Surge Forward Current
tp = 100 s
IFSM
1.5
A
Power Dissipation
PV
210
mW
Junction Temperature
Tj
100
Operating Temperature Range
Tamb
55...100
Storage Temperature Range
Tstg
55...100
Soldering Temperature
Tsd
260
Thermal Resistance Junction/Ambient
t 5sec, 2 mm from case
RthJA
350
K/W
TSAL7600 Features
` Extra high radiant power and radiant intensity ` High reliability ` Low forward voltage ` Suitable for high pulse current operation ` Standard T13/4 (ø 5 mm) package ` Angle of half intensity = ± 30* ` Peak wavelengp = 940 nm ` Good spectral matching to Si photodetectors
TSAL7600 Typical Application
·Infrared remote control units with high power requirements ·Free air transmission systems ·Infrared source for optical counters and card readers ·IR source for smoke detectors