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TSTA7100, TSTA7300, TSTB-1

TSTA7100, TSTA7300, TSTB-1 Selling Leads, Datasheet

MFG:Vishay  Package Cooled:Leaded  D/C:08+

TSTA7100, TSTA7300, TSTB-1 Picture

TSTA7100, TSTA7300, TSTB-1 Datasheet download

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Part Number: TSTA7100

 

MFG: Vishay

Package Cooled: Leaded

D/C: 08+

 

 

 
 
 
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TSTA7100 Suppliers

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  • TSTS7100

  • D/C: 01+& Qty: 2001  Adddate: 2024-04-20
  • Inquire Now
  • SLICCO COMPANY   China
    Contact: Ms.suedy  
    Tel: 86-0755-83740519
    Fax: 86-0755-83740529
    (4)

About TSTA7100

PDF/DataSheet Download

Datasheet: TSTA7100

File Size: 84368 KB

Manufacturer: VISAY [Vishay Siliconix]

Download : Click here to Download

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TSTA7300 Suppliers

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  • TSTS7100

  • D/C: 01+& Qty: 2001  Adddate: 2024-04-20
  • Inquire Now
  • SLICCO COMPANY   China
    Contact: Ms.suedy  
    Tel: 86-0755-83740519
    Fax: 86-0755-83740529
    (4)

About TSTA7300

PDF/DataSheet Download

Datasheet: TSTA7300

File Size: 84524 KB

Manufacturer: VISAY [Vishay Siliconix]

Download : Click here to Download

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TSTB-1 Suppliers

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  • TSTS7100

  • D/C: 01+& Qty: 2001  Adddate: 2024-04-20
  • Inquire Now
  • SLICCO COMPANY   China
    Contact: Ms.suedy  
    Tel: 86-0755-83740519
    Fax: 86-0755-83740529
    (4)

About TST0900

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Datasheet: TST0900

File Size: 167642 KB

Manufacturer:

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TSTA7100 General Description

TSTA7100 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO18 package. Its glass lens provides a very high radiant intensity without external optics.

TSTA7100 Maximum Ratings

Parameter Test Conditions Symbol Value Unit
Reverse Voltage   VR 5 V
Forward Current   IF 100 mA
Peak Forward Current tp/T = 0.5, tp = 100 s IFM 200 mA
Surge Forward Current tp = 100 s IFSM 2.5 A
Power Dissipation   PV 180 mW
Tcase 25 PV 500 mW
Junction Temperature   Tj 100
Storage Temperature Range   Tstg 55...+100
Thermal Resistance Junction/Ambient   RthJA 450 K/W
Thermal Resistance Junction/Case   RthJC 150 K/W

TSTA7100 Features

Extra high radiant intensity
High radiant power
Suitable for pulse operation
Narrow angle of half intensity = ± 5°
Peak wavelength p = 875 nm
High reliability
Good spectral matching to Si photodetectors

TSTA7100 Typical Application

Radiation source in near infrared range

TSTA7300 General Description

TSTA7300 is a high efficiency infrared emitting diode in GaAlAs on GaAlAs technology in a hermetically sealed TO18 package. Its glass lens provides a high radiant intensity without external optics.

TSTA7300 Maximum Ratings

Parameter Test Conditions Symbol Value Unit
Reverse Voltage   VR 5 V
Forward Current   IF 100 mA
Peak Forward Current tp/T = 0.5, tp = 100 s IFM 200 mA
Surge Forward Current tp = 100 s IFSM 2.5 A
Power Dissipation   PV 180 mW
Tcase 25 PV 500 mW
Junction Temperature   Tj 100
Storage Temperature Range   Tstg 55...+100
Thermal Resistance Junction/Ambient   RthJA 450 K/W
Thermal Resistance Junction/Case   RthJC 150 K/W

TSTA7300 Features

High radiant power and radiant intensity
Suitable for pulse operation
Angle of half intensity = ± 12°
Peak wavelength p = 875 nm
High reliability
Good spectral matching to Si photodetectors

TSTA7300 Typical Application

Radiation source in near infrared range

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