TST0911

Features:

900-MHz amplifier and 1800/1900-MHz amplifier for dual-/tripleband application
35 dBm output power @ 900 MHz 32 dBm output power @ 1800/ 1900 MHz
Power-added efficiency (PAE) 50%
Single supply operation at 3 V no negative supply voltage necessary
Current consumption in power-down mode10 A, no external power-supply switch required
Power-ramp control
Mode switch
AC-coupled input, simple input and output matching
SMD package (PSSOP28 with heat slug)


Pinout




Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit
Supply voltage VCC       Pins 1, 2, 3, 5, 11, 12,                                      13, 16, 17, 18, 19 ,20,                                      21, 23, 24, 25, 26 and                                      27Pin 8	VCC1, VCC2 VCC3, VCC4 VCC5, VCC6 VCC, CTL			5.0	V
Input power                   Pin 6 (GSM)                                       Pin 9 (DCS/PCS)	Pin			13 8	dBm dBm
Gain-control voltage      Pin 14	VCTL	0		2.2	V
Duty cycle for operation				25	%
Burst duration	tburst			1.2	ms
External voltage for mode switch Pin 16	VSW	0		VCC	V
Junction temperature	Tj			+ 150	°C
Storage temperature	Tstg	40		+150	°C

Description

The TST0911 is a monolithic dualband power amplifier IC. The device is manufactured using TEMIC Semiconductors' advanced Silicon-Germanium (SiGe) process and has been designed for use in GSM-based cellular phones.

The IC offers the functionality of two amplifiers in one package and is suited for GSM 900/1800/1900 (GSM/ DCS/ PCS) dual- or triple mobile phones. With a single supply voltage operation of 3 V and a neglectable leakage current in power-down mode, the TST0911 needs few external components.