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UG8DT, UG8DT45, UG8FT

UG8DT, UG8DT45, UG8FT Selling Leads, Datasheet

MFG:VISHAY  Package Cooled:TO-220  D/C:0036+

UG8DT, UG8DT45, UG8FT Picture

UG8DT, UG8DT45, UG8FT Datasheet download

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Part Number: UG8DT

 

MFG: VISHAY

Package Cooled: TO-220

D/C: 0036+

 

 

 
 
 
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About UG8DT

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Datasheet: UG8DT

File Size: 42821 KB

Manufacturer: GE [General Semiconductor]

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About UG835A6SA

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Datasheet: UG835A6SA

File Size: 167994 KB

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About UG8FT

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Datasheet: UG8FT

File Size: 38686 KB

Manufacturer: GE [General Semiconductor]

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UG8DT General Description

UG8AT thru UG8DT datasheet

UG8DT Maximum Ratings

 
SYMBOLS
UG8FT
UG8GT
UNITS
Maximum repetitive peak reverse voltage
VRRM
300
400
Volts
Maximum RMS voltage
VRMS
210
280
Volts
Maximum DC blocking voltage
VDC
300
400
Volts
Maximum average forward rectified current at TC=100°C
I(AV)
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)at Tc=100°C
IFSM
8.0
Amps
Peak forward surge current
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method) at TC=100°C
VF
150.0
Volts
Maximum instantaneous forward voltage at 8.0
   20A
   5.0A, TJ=150°C
IR
1.00
1.20
0.95
A
Maximum DC reverse current TA=25°C
at rated DC blocking voltage TA=100°C
trr
10
300
ns
Maximum reverse recovery time (NOTE 1)
trr
20.0
ns
Maximum reverse recovery time TJ=25°C
(NOTE 2) TJ=100°C
IRM
30.0
50
Amps
Maximum recovered stored charge TJ=25°C
(NOTE 2) TJ=100°C
Qrr
20.0
45.0
nC
Typical junction capacitance (NOTE 3)
CJ
45.0
pF
Typical thermal resistance(NOTE4)
RQJC
4.0
°C/W
Operating junction and storage temperature range
TJ, TSTG
-55to+150
°C
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) trr and Qrr measured at IF=8.0A, VR=30V, di/dt=50A/ms, Irr=10% IRM for meaurement of trr
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to case

UG8DT Features

`Plastic package has Underwriters Laboratories Flammability Classification 94V-0
`Ideally suited for use in very high frequency switching power supplies, inverters and as a free wheeling diode
`Ultrafast reverse recovery time for high efficiency
`Soft recovery characteristics
`Excellent high temperature switching
`Glass passivated chip junction
`High temperature soldering guaranteed: 250°C, 0.16" (4.06) from case for 10 seconds

UG8FT General Description

BYV29 Series datasheet

UG8FT Maximum Ratings

 
SYMBOLS
UG8FT
UG8GT
UNITS
Maximum repetitive peak reverse voltage
VRRM
300
400
Volts
Working peak reverse voltage
VRWM
225
300
Volts
Maximum RMS voltage
VRMS
210
280
Volts
Maximum DC blocking voltage
VDC
300
400
Volts
Maximum average forward rectified current at TC=100°C
I(AV)
8.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
100.0
Amps
Maximum instantaneous forward voltage at IF= 8A (NOTE 1) TJ=25°C
TJ=150°C
VF
1.30
1.00
Volts
Maximum reverse leakage current TC=25°C
at working peak reverse voltage TC=100°C
IR
10
350
A
Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A
trr
35
ns
MaximumReverse recovery time at
IF=1.0A, di/dt=100A/ms, VR=30V, Irr=0.1 IRM
trr
50
ns
Maximum reverse recovery current at
IF=10A, di/dt=50A/ms,VR=30V TC=100°C
IRM
5.5
Amps
Maximum stored charge
IF=2A, di/dt=20A/ms, VR=30V, Irr=0.1 IRM
Qrr
55
nC
Typical thermal resistance from junction to case
RQJC
2.2
°C/W
Operating junction and storage temperature range
TJ, TSTG
-40to+150
°C

UG8FT Features

·Plastic package has Underwriters Laboratories Flammability Classification 94V-0
·Ideally suited for freewheeling diode power factor correction applications
·Soft recovery characteristics
·Excellent high temperature switching
·Optimized to reduce switching losses
·High temperature soldering in accordance with CECC 802 / Reflow guaranteed
·Glass passivated chip junction

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