UG8DT D/C00, UG8DTD/C00, UG8GT Selling Leads, Datasheet
MFG:GSI Package Cooled:28446+ D/C:0
UG8DT D/C00, UG8DTD/C00, UG8GT Datasheet download
Part Number: UG8DT D/C00
MFG: GSI
Package Cooled: 28446+
D/C: 0
UG8DT D/C00, UG8DTD/C00, UG8GT
- Table of contents:
Info of UG8DT D/C00
Info of UG8DTD/C00
Info of UG8GT
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About UG835A6SA
PDF/DataSheet Download
Datasheet: UG835A6SA
File Size: 167994 KB
Manufacturer:
Download : Click here to Download
About UG835A6SA
PDF/DataSheet Download
Datasheet: UG835A6SA
File Size: 167994 KB
Manufacturer:
Download : Click here to Download
About UG8GT
PDF/DataSheet Download
Datasheet: UG8GT
File Size: 38686 KB
Manufacturer: GE [General Semiconductor]
Download : Click here to Download
UG8GT Maximum Ratings
|
SYMBOLS |
UG8FT |
UG8GT |
UNITS | |
| Maximum repetitive peak reverse voltage |
VRRM |
300 |
400 |
Volts |
| Working peak reverse voltage |
VRWM |
225 |
300 |
Volts |
| Maximum RMS voltage |
VRMS |
210 |
280 |
Volts |
| Maximum DC blocking voltage |
VDC |
300 |
400 |
Volts |
| Maximum average forward rectified current at TC=100°C |
I(AV) |
8.0 |
Amps | |
| Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM |
100.0 |
Amps | |
| Maximum instantaneous forward voltage at IF= 8A (NOTE 1) TJ=25°C TJ=150°C |
VF |
1.30 1.00 |
Volts | |
| Maximum reverse leakage current TC=25°C at working peak reverse voltage TC=100°C |
IR |
10 350 |
A | |
| Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A |
trr |
35 |
ns | |
| MaximumReverse recovery time at IF=1.0A, di/dt=100A/ms, VR=30V, Irr=0.1 IRM |
trr |
50 |
ns | |
| Maximum reverse recovery current at IF=10A, di/dt=50A/ms,VR=30V TC=100°C |
IRM |
5.5 |
Amps | |
| Maximum stored charge IF=2A, di/dt=20A/ms, VR=30V, Irr=0.1 IRM |
Qrr |
55 |
nC | |
| Typical thermal resistance from junction to case |
RQJC |
2.2 |
°C/W | |
| Operating junction and storage temperature range |
TJ, TSTG |
-40to+150 |
°C | |
UG8GT Features
·Plastic package has Underwriters Laboratories Flammability Classification 94V-0
·Ideally suited for freewheeling diode power factor correction applications
·Soft recovery characteristics
·Excellent high temperature switching
·Optimized to reduce switching losses
·High temperature soldering in accordance with CECC 802 / Reflow guaranteed
·Glass passivated chip junction
·Ideally suited for freewheeling diode power factor correction applications
·Soft recovery characteristics
·Excellent high temperature switching
·Optimized to reduce switching losses
·High temperature soldering in accordance with CECC 802 / Reflow guaranteed
·Glass passivated chip junction
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