VF2835, VF30100C, VF30100S Selling Leads, Datasheet
MFG:TI Package Cooled:TVSOP D/C:09+
VF2835, VF30100C, VF30100S Datasheet download
Part Number: VF2835
MFG: TI
Package Cooled: TVSOP
D/C: 09+
VF2835, VF30100C, VF30100S
- Table of contents:
Info of VF2835
Info of VF30100C
Info of VF30100S
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About VF294H1.54M
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VF30100C General Description
V30100C, VF30100C, VB30100C & VI30100C datasheet
VF30100C Maximum Ratings
| PARAMETER | SYMBOL | V30100C | VF30100C | VB30100C | VI30100C | UNIT |
| Maximum repetitive peak reverse voltage | VRRM | 100 | V | |||
| Maximum average forward rectified current (Fig. 1) per device per diode |
IF(AV) | 30 15 |
A | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode |
IFSM | 160 | A | |||
| Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 min |
VAC | 1500 | V | |||
| Operating junction and storage temperature range | TJ, TSTG | - 40 to + 150 | ||||
VF30100C Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/E
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/E
VF30100C Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection
VF30100S Maximum Ratings
| PARAMETER | SYMBOL |
V30100S |
VF30100S |
VB30100S |
VI30100S |
UNIT |
| Maximum repetitive peak reverse voltage | VRRM |
100 |
V | |||
| Maximum average forward rectified current (Fig. 1) | VF(AV) |
30 |
V | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM |
250 |
A | |||
| Isolation voltage (ITO-220AC only) from terminals to heatsink t = 1 min |
VAC |
1500 |
V | |||
| Operating junction and storage temperature range | TJ, TSTJ |
- 40 to + 150 |
||||
VF30100S Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB, ITO-220AB, and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)
• Solder dip 260 , 40 s (for TO-220AB, ITO-220AB, and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VF30100S Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
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