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VN610SP-E, VN610SPTR-E, VN66AFD

Table of contents:
Info of VN610SP-E
Info of VN610SPTR-E
Info of VN66AFD

VN610SP-E, VN610SPTR-E, VN66AFD Selling Leads, Datasheet

MFG:STMicroelectronics Category:Integrated Circuits (ICs) Package Cooled:7850 D/C:06+07+pb-free

VN610SP-E, VN610SPTR-E, VN66AFD Datasheet download

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Part Number: VN610SP-E

Category: Integrated Circuits (ICs)

MFG: STMicroelectronics

Package Cooled: 7850

D/C: 06+07+pb-free

Description: IC DRIVER HIGHSIDE 1CH POWERSO10

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VN610SP-E General Description

The VN610SP-E is a monolithic device made using STMicroelectronics VIPower M0-3 technology. It is intended for driving resistive or inductive loads with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient compatibility table). This device integrates an analog current sense which delivers a current proportional to the load current (according to a known ratio). Active current limitation combined with thermal shut-down and automatic restart protect the device against overload. Device automatically turns off in case of ground pin disconnection.

VN610SP-E Maximum Ratings

Parameter	Symbol	Value	Units
DC supply voltage (Overvoltage protected)	V_CC	45	V
DC ground pin reverse current TRAN Ground pin reverse current pulse duration < 1ms)	V_C	- 0.3	MA
DC reverse ground pin current	-I_GND	- 200	A
DC output current	I_OUT	Internally limited	mA
Reverse DC output current	- I_OUT	- 21	mA
DC input current	I_IN	+/- 10	mA
Maximum switching energy (L=1.5mH; RL=0Ω; Vbat=13.5V; Tjstart=150°C; IOUT = IlimL(Typ.) )	I_CSD	51	mJ
Electrostatic Discharge (Human Body Model: R=1.5K C=100pF) INPUT STATUS STAT_DIS OUTPUT V VCC CC	-I_CSENSE	4000 4000 4000 5000 5000	V V V V V
Junction Operating Temperature	V_ESD	750	°C
Case operating temperature	V_ESD	- 40 to 150	°C
Storage temperature	T_j	- 55 to 150	°C

VN610SP-E Features

OUTPUT CURRENT: 45 A
CMOS COMPATIBLE INPUT
PROPORTIONAL LOAD CURRENT SENSE
UNDERVOLTAGE AND OVERVOLTAGEn SHUT-DOWN
OVERVOLTAGE CLAMP
THERMAL SHUT DOWN
CURRENT LIMITATION
VERY LOW STAND-BY POWER DISSIPATION
PROTECTION AGAINST:
LOSS OF GROUND AND LOSS OF VCC
REVERSE BATTERY PROTECTION (*)
IN COMPLIANCE WITH THE 2002/95/EC EUROPEAN DIRECTIVE

VN610SP-E Connection Diagram

VN610SPTR-E Parameters

Technical/Catalog Information	VN610SPTR-E
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	PowerSO-10 Exposed Bottom Pad
Mounting Type	Surface Mount
Type	High Side
Voltage - Supply	5.5 V ~ 36 V
On-State Resistance	10 mOhm
Current - Output / Channel	-
Current - Peak Output	75A
Packaging	Tape & Reel (TR)
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-40°C ~ 150°C
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VN610SPTR E VN610SPTRE

VN66AFD Maximum Ratings

Parameter		Symbol	TN0601L	VN0606L	VN66AFDb	Unit
Drain-Source Voltage		V_DS	60	60	60	V
Gate-Source Voltage		V_GS	±20	±30	±30	V
Continuous Drain Current (T_J= 150)	T_A= 25	I_D	0.47	0.33	1.45	A
Continuous Drain Current (T_J= 150)	T_A=100	I_D	0.29	0.21	0.92	A
Pulsed Drain Currenta		I_DM	1.5	1.6	3	W
Power Dissipation	T_A= 25	P_D	0.8	0.8	15
Power Dissipation	T_A= 100	P_D	0.32	0.32	6
Thermal Resistance, Junction-to-Ambient		R_thJA	156	156		/W
Thermal Resistance, Junction-to-Case		R_thJC				/W
Operating Junction and Storage Temperature Range		T_J, T_stg	55 to 150

Notes
a. Pulse width limited by maximum junction temperature.
b. Reference case for all temperature testing.

VN66AFD Features

` Low On-Resistance: 1.2
` Low Threshold: <1.6 V
` Low Input Capacitance: 35 pF
` Fast Switching Speed: 9 ns
` Low Input and Output Leakage

VN66AFD Typical Application

· Direct Logic-Level Interface: TTL/CMOS
· Drivers: Relays, Solenoids, Lamps, Hammers Displays, Memories, Transistors, etc.
· Battery Operated Systems
· Solid-State Relays

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