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VN66AFD

MOSFET 60V 1.46A 15W

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SeekIC No. : 00166147 Detail

VN66AFD: MOSFET 60V 1.46A 15W

VN66AFD Data Sheet

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Part Number:
VN66AFD
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 0.39 A
Configuration : Single Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220SD-3    

Description

Resistance Drain-Source RDS (on) :
Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 0.39 A
Package / Case : TO-220SD-3


Features:

 ` Low On-Resistance: 1.2
 ` Low Threshold: <1.6 V
 ` Low Input Capacitance: 35 pF
 ` Fast Switching Speed: 9 ns
 ` Low Input and Output Leakage


Application

· Direct Logic-Level Interface: TTL/CMOS
· Drivers: Relays, Solenoids, Lamps, Hammers Displays, Memories, Transistors, etc.
· Battery Operated Systems
· Solid-State Relays


Specifications

Parameter
Symbol
TN0601L
VN0606L
VN66AFDb
Unit
Drain-Source Voltage
VDS
60
60
60
V
Gate-Source Voltage
VGS
±20
±30
±30
Continuous Drain Current
(TJ = 150)
TA= 25
ID
0.47
0.33
1.45
A
TA=100
0.29
0.21
0.92
Pulsed Drain Currenta
IDM
1.5
1.6
3
W
Power Dissipation
TA= 25
PD
0.8
0.8
15
TA= 100
0.32
0.32
6
Thermal Resistance, Junction-to-Ambient
RthJA
156
156
/W
Thermal Resistance, Junction-to-Case
RthJC
Operating Junction and Storage Temperature Range
TJ, Tstg
55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
b. Reference case for all temperature testing.


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