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VND10SP, VND14N04-TR, VND14NV04-1

VND10SP, VND14N04-TR, VND14NV04-1 Selling Leads, Datasheet

MFG:STMicroelectronics  Category:Integrated Circuits (ICs)  Package Cooled:SOP-10  D/C:08+

VND14NV04-1 Picture

VND10SP, VND14N04-TR, VND14NV04-1 Datasheet download

Five Points

Part Number: VND14NV04-1

Category: Integrated Circuits (ICs)

MFG: STMicroelectronics

Package Cooled: SOP-10

D/C: 08+

Description: MOSFET POWER 40V 12A IPAK

 

 
 
 
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About VND05

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About VND05

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  • VND02ASP

  • Vendor: ST Pack: SOP D/C: 05+& Qty: 6975 Note: 2C006  Adddate: 2019-02-18
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  • Kejin Electronics(HK) Limited   China
    Contact: Ms.JoyLin   MSN:joylin-kejinic@hotmail.com
    Tel: 86-755-83997989
    Fax: 86-755-83282993
    (5)
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    Fax: 86-755-83282993
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  • VND05B

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  • Kejin Electronics(HK) Limited   China
    Contact: Ms.JoyLin   MSN:joylin-kejinic@hotmail.com
    Tel: 86-755-83997989
    Fax: 86-755-83282993
    (5)
  • VND05B

  • D/C: 2012+& Qty: 5873  Adddate: 2019-02-18
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  • Hgme Electronics co.,ltd   China
    Contact: Mr.Mark   MSN:evershine29@hotmail.com
    Tel: +86-0755-27895789
    Fax: +86-0755-27895788
    (10244)
  • VND05BSP

  • Qty: 1000 Note: auto ic  Adddate: 2019-02-18
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  • obddo tech Co.,Ltd   China
    Contact: Mr.cheng   MSN:obddo@msn.com
    Tel: 0086-0755-81105786
    Fax: --
    (9)

About VND14NV04-1

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Datasheet: VND14NV04-1

File Size: 522741 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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VND14NV04-1 Parameters

Technical/Catalog InformationVND14NV04-1
VendorSTMicroelectronics
CategoryIntegrated Circuits (ICs)
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
Mounting TypeThrough Hole
TypeLow Side
Voltage - Supply-
On-State Resistance35 mOhm
Current - Output / Channel-
Current - Peak Output18A
PackagingTube
Input TypeNon-Inverting
Number of Outputs1
Operating Temperature-
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names VND14NV04 1
VND14NV041

VND14NV04-1 General Description

The VNB14NV04, VND14NV04, VND14NV04-1,VNP14NV04, VNS14NV04, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation |and overvoltage clamp protect the chip in harsh environments.

Fault feedback can be detected by monitoring the voltage at the input pin.

VND14NV04-1 Maximum Ratings

Symbol Parameter Value Unit
SO-8 DPAK TO-220  IPAK D2PAK
VDS

Drain-source Voltage (VIN = 0)

Internally Clamped V

VIN

Input Voltage

Internally Clamped V
IIN

Input Current

+/-20 mA

RIN MIN

Minimum Input Series Impedance

10

ID

Drain Current

Internally Clamped A
IR

Reverse DC Output Current

-15 A
VESD1

Electrostatic discharge(R=1.5 K,C= 100 pF)

4000 V

VESD2

Electrostatic Discharge on output pin only
R=330, C=150pF)
16500 V

Ptot

Total Dissipation at TC=25°C 4.6 74 74 74

74

W

 EMAX

 Maximum Switching Energy (L=0.4mH;
RL=0; Vbat=13.5V; Tjstart=150ºC; IL=18A)
   93      93  mJ
Tj

Operating Junction Temperature

Internally Limited
TC

Case operating temperature

Internally Limited

Tstg

Storage Temperature

-55 to 150

VND14NV04-1 Features

During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path.The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 50KHz. The only difference from the user's standpoint is that a small DC current IISS (typ.100mA) flows into the INPUT pin in order to supply the internal circuitry.

The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT:limits the drain current ID to Ilim whatever the INPUT pin voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough,junction temperature may reach the overtemperature threshold Tjsh.

- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION:these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted when the chip temperature falls of about 15 C below shut-down temperature.

- STATUS FEEDBACK:in the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current Igf, the INPUT pin will fall to 0V. This will not however affect the device operation:no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current IISS.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit.

VND14NV04-1 Connection Diagram

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