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VND07NV04, VND10, VND10B

VND07NV04, VND10, VND10B Selling Leads, Datasheet

MFG:STMicroelectronics  Category:Integrated Circuits (ICs)  Package Cooled:HSOP  D/C:05+

VND10B Picture

VND07NV04, VND10, VND10B Datasheet download

Five Points

Part Number: VND10B

Category: Integrated Circuits (ICs)

MFG: STMicroelectronics

Package Cooled: HSOP

D/C: 05+

Description: IC SSR HISIDE 2CH PENTAWATT VERT

 

 
 
 
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About VND05

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Datasheet: VND05

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Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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  • VND02ASP

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About VND10

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Datasheet: VND10

File Size: 191393 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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  • VND10BX

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  • YOUWEI ELECTRONICS CO., Ltd   China
    Contact: Mr.JACKHU   MSN:youweidz@hotmail.com
    Tel: 86-0755-33062827
    Fax: 86-0755-33062897
    (1)
  • VND10BX

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    Contact: Ms.JoyLin   MSN:joylin-kejinic@hotmail.com
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    Fax: 86-755-83282993
    (5)
  • VND02ASP

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  • VND05B

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About VND10B

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Datasheet: VND10B

File Size: 191393 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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VND10B Parameters

Technical/Catalog InformationVND10B
VendorSTMicroelectronics
CategoryIntegrated Circuits (ICs)
Package / CasePentawatt-5 (Vertical, Bent and Staggered Leads)
Mounting TypeThrough Hole
TypeHigh Side
Voltage - Supply6 V ~ 26 V
On-State Resistance65 mOhm
Current - Output / Channel3.4A
Current - Peak Output14A
PackagingTube
Input TypeNon-Inverting
Number of Outputs2
Operating Temperature-40°C ~ 125°C
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names VND10B
VND10B

VND10B General Description

The VND10B is a monolithic device made usin SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip from over temperature and short circuit.The status output provides an indication of open load in on state, open load in off state,overtemperature conditions and stuck-on to VCC.

VND10B Maximum Ratings

Symbol Parameter Value Unit
V(BR)DSS

Drain-Source breakdown voltage

40 V

IOUT

Output current (continuous) at Tc=85°C

14 A

IOUT(RMS)

RMS Output current at Tc=85°C and f > 1Hz

14 A
IR

Reverse output current at Tc=85°C

-14 A

IIN

Input current

±10

mA

-VCC

Reverse supply voltage

-4

V

ISTAT

Status current

± 10

mA

VESD

Electrostatic discharge(R=1.5k, C=100pF)

2000 V

PTOT

Power dissipation at Tc=25°C 75

W

Tj

Junction operating temperature

-40 to 150

TSTG

Storage Temperature

-55 to 150

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