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VNP7N04FI, VNQ05XSP, VNQ5025AK

VNP7N04FI, VNQ05XSP, VNQ5025AK Selling Leads, Datasheet

MFG:STMicroelectronics  Category:Integrated Circuits (ICs)  Package Cooled:TO 220 ISO FULL PACK IN LINE  D/C:08+/09+

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VNP7N04FI, VNQ05XSP, VNQ5025AK Datasheet download

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Part Number: VNP7N04FI

Category: Integrated Circuits (ICs)

MFG: STMicroelectronics

Package Cooled: TO 220 ISO FULL PACK IN LINE

D/C: 08+/09+

Description: MOSFET POWER 42V 7A ISOWATT220

 

 
 
 
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About VNP7N04FI

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Datasheet: VNP7N04FI

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About VNQ05XSP16

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Datasheet: VNQ05XSP16

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VNP7N04FI Parameters

Technical/Catalog InformationVNP7N04FI
VendorSTMicroelectronics
CategoryIntegrated Circuits (ICs)
Package / CaseISOWATT-220-3
Mounting TypeThrough Hole
TypeLow Side
Voltage - Supply-
On-State Resistance140 mOhm
Current - Output / Channel-
Current - Peak Output7A
PackagingTube
Input TypeNon-Inverting
Number of Outputs1
Operating Temperature-
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names VNP7N04FI
VNP7N04FI

VNP7N04FI General Description

The VND7N04, VND7N04-1, VNP7N04FI and VNK7N04FM are monolithic devices made using STMicroeletronics VIPower M0 Technology,intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Fault feedback can be detected by monitoring the voltage at the input pin.

VNP7N04FI Maximum Ratings

Symbol Parameter Value Unit
DPAK
IPAK
ISOWATT220 SOT-82FM
VDS

Drain-source Voltage (Vin = 0)

Internally Clamped V

VIN

Input Voltage

18 V

ID

Drain Current

Internally Clamped A
IR

Reverse DC Output Current

-7 A
Vesd

Electrostatic discharge(C= 100 pF, R=1.5 K)

2000 V

Ptot

Total Dissipation at TC=25°C

60

24

9

W

Tj

Operating Junction Temperature

Internally Limited
TC

Case operating temperature

Internally Limited

Tstg

Storage Temperature

-55 to 150

VNP7N04FI Features

During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user's standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.

The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability.This feature is mainly important when driving inductive loads.

- LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active,the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.

- OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensine element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150oC. The device is automatically restarted when the chip temperature falls below 135oC.

- STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin.The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 W.The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential.

Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on).

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