WFF634, WFF640, WFF730 Selling Leads, Datasheet
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WFF634, WFF640, WFF730
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Info of WFF634
Info of WFF640
Info of WFF730
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About WFF2N60
PDF/DataSheet Download
Datasheet: WFF2N60
File Size: 740467 KB
Manufacturer: Wisdom technologies Int`l
Download : Click here to Download
About WFF2N60
PDF/DataSheet Download
Datasheet: WFF2N60
File Size: 740467 KB
Manufacturer: Wisdom technologies Int`l
Download : Click here to Download
About WFF2N60
PDF/DataSheet Download
Datasheet: WFF2N60
File Size: 740467 KB
Manufacturer: Wisdom technologies Int`l
Download : Click here to Download
WFF634 General Description
This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.
WFF634 Maximum Ratings
| Symbol | Parameter | Value | Units |
| VDSS | Drain to Source Voltage | 250 | V |
| ID | Continuous Drain Current(@TC = 25) | 8.1* | A |
| Continuous Drain Current(@TC = 100) | 5.1* | A | |
| IDM | Drain Current Pulsed (Note 1) | 32.4* | A |
| VGS | Gate to Source Voltage | ±25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 200 | mJ |
| EAR | Repetitive Avalanche Energy (Note 1) | 7.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Total Power Dissipation(@TC = 25 ) | 38 | W |
| Derating Factor above 25 | 0.3 | W/ | |
| TSTG, TJ | Operating Junction Temperature & Storage Temperature | - 55 ~ 150 | |
| TL | Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
300 |
WFF634 Features
RDS(on) (Max 0.45 )@VGS=10V
Gate Charge (Typical 29nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150)
Gate Charge (Typical 29nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150)
WFF640 General Description
This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.
WFF640 Maximum Ratings
| Symbol | Parameter | Value | Units |
| VDSS | Drain to Source Voltage | 200 | V |
| ID | Continuous Drain Current(@TC = 25°C) | 18* | A |
| Continuous Drain Current(@TC = 100°C) | 11.4* | A | |
| IDM | Drain Current Pulsed (Note 1) | 72* | A |
| VGS | Gate to Source Voltage | ±25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 250 | mJ |
| EAR | Repetitive Avalanche Energy (Note 1) | 13.9 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Total Power Dissipation(@TC = 25 °C) | 43 | W |
| Derating Factor above 25 °C | 0.35 | W/ | |
| TSTG, TJ | Operating Junction Temperature & Storage Temperature | - 55 ~ 150 | |
| TL | Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
300 |
WFF640 Features
RDS(on) (Max 0.18 )@VGS=10V
Gate Charge (Typical 45nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
Gate Charge (Typical 45nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
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