Features: RDS(on) (Max 0.18 )@VGS=10V Gate Charge (Typical 45nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 200 V ID Continuous Drain Current...
WFF640: Features: RDS(on) (Max 0.18 )@VGS=10V Gate Charge (Typical 45nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)Specifications Symb...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Symbol | Parameter | Value | Units |
| VDSS | Drain to Source Voltage | 200 | V |
| ID | Continuous Drain Current(@TC = 25°C) | 18* | A |
| Continuous Drain Current(@TC = 100°C) | 11.4* | A | |
| IDM | Drain Current Pulsed (Note 1) | 72* | A |
| VGS | Gate to Source Voltage | ±25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 250 | mJ |
| EAR | Repetitive Avalanche Energy (Note 1) | 13.9 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns |
| PD | Total Power Dissipation(@TC = 25 °C) | 43 | W |
| Derating Factor above 25 °C | 0.35 | W/ | |
| TSTG, TJ | Operating Junction Temperature & Storage Temperature | - 55 ~ 150 | |
| TL | Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
300 |
This Power MOSFET of the WFF640 is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices of the WFF640 are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.