WFR100BRFP16WT, WFU1N80, WFU2N60 Selling Leads, Datasheet
MFG:STM Package Cooled:02+ D/C:SOP-16
WFR100BRFP16WT, WFU1N80, WFU2N60 Datasheet download
Part Number: WFR100BRFP16WT
MFG: STM
Package Cooled: 02+
D/C: SOP-16
WFR100BRFP16WT, WFU1N80, WFU2N60
- Table of contents:
Info of WFR100BRFP16WT
Info of WFU1N80
Info of WFU2N60
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About WFR630
PDF/DataSheet Download
Datasheet: WFR630
File Size: 826674 KB
Manufacturer: Wisdom technologies Int`l
Download : Click here to Download
About WFU2N60
PDF/DataSheet Download
Datasheet: WFU2N60
File Size: 738772 KB
Manufacturer: Wisdom technologies Int`l
Download : Click here to Download
About WFU2N60
PDF/DataSheet Download
Datasheet: WFU2N60
File Size: 738772 KB
Manufacturer: Wisdom technologies Int`l
Download : Click here to Download
WFU2N60 General Description
This Power MOSFET is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
WFU2N60 Maximum Ratings
| Symbol | Parameter | Value | Units |
| VDSS | Drain to Source Voltage | 600 | V |
| ID | Continuous Drain Current(@TC = 25°C) | 1.8 | A |
| Continuous Drain Current(@TC = 100°C) | 1.1 | A | |
| IDM VGS EAS EAR dv/dt |
Drain Current Pulsed (Note 1) Gate to Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) |
6.0 ±30 120 4.4 4.5 |
A V mJ mJ V/ns |
| PD | Total Power Dissipation(@TC = 25 °C) | 44 | W |
| Derating Factor above 25 °C | 0.35 | W/°C | |
| TSTG, TJ | Operating Junction Temperature & Storage Temperature | - 55 ~ 150 | °C |
| TL | Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. |
300 | °C |
WFU2N60 Features
RDS(on) (Max 5.0 Ω )@VGS=10V
Gate Charge (Typical 9.5nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
Gate Charge (Typical 9.5nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
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