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WFR630

Features: RDS(on) (Max 0.4 Ω )@VGS=10V Gate Charge (Typical 22nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 200 V ID Continuous Drain C...

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SeekIC No. : 004545680 Detail

WFR630: Features: RDS(on) (Max 0.4 Ω )@VGS=10V Gate Charge (Typical 22nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)Specifications ...

WFR630 Data Sheet

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Part Number:
WFR630
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

RDS(on) (Max 0.4 Ω )@VGS=10V
Gate Charge (Typical 22nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)


Specifications

Symbol Parameter Value Units
VDSS Drain to Source Voltage 200 V
ID Continuous Drain Current(@TC = 25°C) 7.0 A
Continuous Drain Current(@TC = 100°C) 4.5 A
IDM

VGS

EAS

EAR

dv/dt		 Drain Current Pulsed (Note 1)

Gate to Source Voltage

Single Pulsed Avalanche Energy (Note 2)

Repetitive Avalanche Energy (Note 1)

Peak Diode Recovery dv/dt (Note 3)		 28

±25

160

5.0

5.5
 A

V

mJ

mJ

V/ns
PD Total Power Dissipation(@TC = 25 °C) 50 W
Derating Factor above 25 °C 0.4 W/°C
TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C
TL Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.		 300 °C



Description

This Power MOSFET of the WFR630 is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices of the WFR630 are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.




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