ZVN4206G, ZVN4206G(1) TA, ZVN4206GTA Selling Leads, Datasheet
MFG:ZETEX Package Cooled:SOT-223-3 D/C:08+
ZVN4206G, ZVN4206G(1) TA, ZVN4206GTA Datasheet download
Part Number: ZVN4206G
MFG: ZETEX
Package Cooled: SOT-223-3
D/C: 08+
ZVN4206G, ZVN4206G(1) TA, ZVN4206GTA
- Table of contents:
Info of ZVN4206G
Info of ZVN4206G(1) TA
Info of ZVN4206GTA
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About ZVN4206G
PDF/DataSheet Download
Datasheet: ZVN4206G
File Size: 47003 KB
Manufacturer: ZETEX [Zetex Semiconductors]
Download : Click here to Download
About ZVN0117TA
PDF/DataSheet Download
Datasheet: ZVN0117TA
File Size: 48433 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About ZVN0117TA
PDF/DataSheet Download
Datasheet: ZVN0117TA
File Size: 48433 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
ZVN4206G General Description
The ZVN4206G is designed as SOT223 N-channel enhancement mode vertical DMOS FET. Typical applications include DC-DC converters, solenoid / relay drivers for automotive applications, stepper motor drivers and print head drivers.
It has five features. (1) Compact geometry. (2) It has fast switching speeds. (3) No secondary breakdown and excellent temperature stability. (4) igh input impedance and low current drive. (5) Ease of parralleling. That are all the main features.
Some absolute maximum ratings have been concluded into several points as follow. (1) Its drain-source voltage would be 60V. (2) Its continuous drain current at Tamb=25°C would be 1A. (3) Its pulsed drain current would be 8A. (4) Its gate-source voltage would be ±20V. (5) Its power dissipation at Tamb=25°C would be 2W. (6) Its operating and storage temperature range would be from -55 to +150°C.
Also some electrical characteristics about it. (1) Its drain-source breakdown voltage would be min 60V with condition of Id=1mA and Vgs=0. (2) Its gate to source threshold voltage would be min 1.3V and max 3V with condition of Id=1mA and Vds=Vgs. (3) Its gate to body leakage would be max 100nA with condition of Vgs=±20V and Vds=0. (4) Its zero gate voltage drain current would be max 10uA with condition of Vds=60V and Vgs=0 and would be max 100uA with condition of Vds=48V and Vgs=0, T=125°C. (5) Its on-state drain current would be min 3A with condition of Vds=25V and Vgs=10V. (6) Its static drain-source on-state resistance would be max 1 with condition of Vgs=10V and Id=1.5A. (7) Its forward transconductance would be min 300mS with condition of Vds=25V and Id=1.5A. (8) Its input capacitance would be max 100pF with condition of Vds=25V and Vgs=0V and f=1MHz. (9) Its common source output capacitance would be max 60pF with condition of with condition of Vds=25V and Vgs=0V and f=1MHz. (10) Its reverse transfer capacitance would be max 20pF with condition of Vds=25V and Vgs=0V and f=1MHz. (11) Its turn-on delay time would be max 8ns. (12) Its rise time would be max 12ns. (13) Its turn-off time would be max 12ns. (14) Its fall time would be max 15ns. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!
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