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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V |
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 0.16 A |
| Resistance Drain-Source RDS (on) : | 16000 mOhms | Configuration : | Single |
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
| Package / Case : | E-Line-3 |
|
PARAMETER |
SYMBOL |
VALUE |
UNIT |
| Drain-Source Voltage |
VDS |
200 |
V |
| Continuous Drain Current at Tamb=25°C |
ID |
150 |
mA |
| Pulsed Drain Current |
IDM |
2 |
A |
| Gate-Source Voltage |
VGS |
± 20 |
V |
| Power Dissipation at Tamb=25°C |
Ptot |
700 |
mW |
| Operating and Storage Temperature Range |
Tj;Tstg |
-55 to +150 |
°C |