MOSFET -
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 350 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 0.09 A | ||
| Configuration : | Single | Maximum Operating Temperature : | + 150 C | ||
| Mounting Style : | Through Hole | Package / Case : | E-Line-3 |
| PARAMETER | SYMBOL | VALUE | UNIT |
| Drain-Source Voltage | VDS | 350 | V |
| Continuous Drain Current at Tamb=25°C | ID | 90 | mA |
| Pulsed Drain Current | IDM | 600 | mA |
| Gate Source Voltage | VGS | ± 20 | V |
| Power Dissipation at Tamb=25°C | Ptot | 70 | mW |
| Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |