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DataSheet: MTW
DataSheet List
- Part Number :
- Description :
- PDF file size :
- Manufacturer :
- PDF Download :
MTW4N80E
- TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE
- 70.17K
- MOTOROLA [Motorola, Inc]
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MTW54N05E
- High Energy in the Avalanche and Commutation modes
- 68.36K
- MOTOROLA [Motorola, Inc]
- Click Download
MTW6N100
- TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
- 195.36K
- MOTOROLA [Motorola, Inc]
- Click Download
MTW6N100E
- TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
- 195.36K
- MOTOROLA [Motorola, Inc]
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MTW6N100E
- TMOS POWER FET 6.0 AMPERES 1000 VOLTS
- 170.21K
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MTW6N100E
- TMOS POWER FET 6.0 AMPERES 1000 VOLTS
- 195.36K
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MTW6N60E
- Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
- 69.58K
- MOTOROLA [Motorola, Inc]
- Click Download
MTW7N80E
- TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM
- 220.96K
- MOTOROLA [Motorola, Inc]
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MTW7N80E
- TMOS POWER FET 7.0 AMPERES 800 VOLTS
- 190.45K
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MTW7N80E
- TMOS POWER FET 7.0 AMPERES 800 VOLTS
- 220.96K
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MTW8N50E
- TMOS E FET POWER FIELD EFFECT TRANSISTOR
- 70.11K
- MOTOROLA [Motorola, Inc]
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MTW8N60E
- TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
- 70.77K
- MOTOROLA [Motorola, Inc]
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MTW8N60E/D
- TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
- 70.77K
- MOTOROLA [Motorola, Inc]
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