MTW4N80E, MTW54N05E, MTW6N100 Selling Leads, Datasheet
MFG:FRE Package Cooled:TO D/C:TO
MTW4N80E, MTW54N05E, MTW6N100 Datasheet download
Part Number: MTW4N80E
MFG: FRE
Package Cooled: TO
D/C: TO
MTW4N80E, MTW54N05E, MTW6N100
- Table of contents:
Info of MTW4N80E
Info of MTW54N05E
Info of MTW6N100
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About MTW4N80E
PDF/DataSheet Download
Datasheet: MTW4N80E
File Size: 71855 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTW54N05E
PDF/DataSheet Download
Datasheet: MTW54N05E
File Size: 69997 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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About MTW6N100
PDF/DataSheet Download
Datasheet: MTW6N100
File Size: 200046 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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MTW6N100 General Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTW6N100 Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
1000 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
1000 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
6.0 4.2 18 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
180 1.43 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =50Vdc,VGS = 10Vdc, Vdc,Peak IL =6.0 Apk, L =27.77 mH, RG = 25) |
EAS |
720 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
0.70 40 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
MTW6N100 Features
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware
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