MTW10N40E

Features of the MTW10N40E are:(1)avalanche energy specified;(2)source-to-drain diode recovery time comparable to a discrete fast recovery diode;(3)diode is characterized for use in bndge circuits;(4)IDSS and VDS(on) specified at elevated temperature.

The absolute maximum ratings of the MTW10N40E can be summarized as:(1):the rating is drain-source voltage,the symbol is VDSS,the value is 400,the unit is Vdc;(2):the rating is drain-gate voltage,the symbol is VDGR,the value is 400,the unit is Vdc;(3):the rating is gate-source voltage,the symbol is VGS,the value is ±20,the unit is Vdc;(4):the rating is total power dissipation @ TC=25,the symbol is PD,the value is 150,the unit is Watts; (5):the rating is total power dissipation derate above 25,the symbol is PD,the value is 1.0,the unit is W/;(6):the rating is operating and storage temperature range,the symbol is TJ,Tstg,the value is -55 to 150,the unit is ;(7):the rating is single pulse drain-to-source avalanche energy-starting,TJ=25,the symbol is EAS,the value is 520,the unit is mJ;(8):the rating is thermal resistance junction to case,the symbol is RJC,the value is 10,the unit is /W;(9):the rating is thermal resistance junction to ambient,the symbol is RJA,the value is 40,the unit is /W;(10):the rating is maximum lead temperature for soldering purposes,1/8" from case for 5 seconds,the symbol is TL,the value is 260,the unit is .