Position: Home > DataSheet > Index M > MTW Series > MTW10N40E, MTW14N50E, MTW15N25E

Low Cost Custom Prototype PCB Manufacturer

MTW10N40E, MTW14N50E, MTW15N25E

Table of contents:
Info of MTW10N40E
Info of MTW14N50E
Info of MTW15N25E

MTW10N40E, MTW14N50E, MTW15N25E Selling Leads, Datasheet

MFG:MOTOROLA Package Cooled:9800 D/C:TO

MTW10N40E, MTW14N50E, MTW15N25E Datasheet download

Five Points

Part Number: MTW10N40E

MFG: MOTOROLA

Package Cooled: 9800

D/C: TO

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

MTW10N40E General Description

Features of the MTW10N40E are:(1)avalanche energy specified;(2)source-to-drain diode recovery time comparable to a discrete fast recovery diode;(3)diode is characterized for use in bndge circuits;(4)IDSS and VDS(on) specified at elevated temperature.

The absolute maximum ratings of the MTW10N40E can be summarized as:(1):the rating is drain-source voltage,the symbol is VDSS,the value is 400,the unit is Vdc;(2):the rating is drain-gate voltage,the symbol is VDGR,the value is 400,the unit is Vdc;(3):the rating is gate-source voltage,the symbol is VGS,the value is ±20,the unit is Vdc;(4):the rating is total power dissipation @ TC=25,the symbol is PD,the value is 150,the unit is Watts; (5):the rating is total power dissipation derate above 25,the symbol is PD,the value is 1.0,the unit is W/;(6):the rating is operating and storage temperature range,the symbol is TJ,Tstg,the value is -55 to 150,the unit is ;(7):the rating is single pulse drain-to-source avalanche energy-starting,TJ=25,the symbol is EAS,the value is 520,the unit is mJ;(8):the rating is thermal resistance junction to case,the symbol is RJC,the value is 10,the unit is /W;(9):the rating is thermal resistance junction to ambient,the symbol is RJA,the value is 40,the unit is /W;(10):the rating is maximum lead temperature for soldering purposes,1/8" from case for 5 seconds,the symbol is TL,the value is 260,the unit is .

MTW14N50E General Description

This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTW14N50E Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	500	Vdc
DraintoGate Voltage (R_GS = 1.0 M)	V_DGR	500	Vdc
GatetoSource Voltage - Continuous	V_GS	+20	Vdc
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (t_p 10 s)	I_D I_D I_DM	14 9.0 60	Adc Apk
Total Power Dissipation Derate above 25°C	P_D	180 1.44	Watts W/°C
Operating and Storage Temperature Range	T_J, T_stg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy T_J = 25°C (V_DD =50Vdc,V_GS = 10Vdc, Vdc,Peak I_L =14Apk, L =8.8mH, R_G = 25)	E_AS	860	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	R_JC R_JA	0.7 40	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	T_L	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

MTW14N50E Features

• Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components