0150SC-1250M

The 0150SC-1250M is designed as one kind of common gate N-channel class AB silicon carbide static induction transistor device that is the first in a series of High Power Silicon Carbide Transistors from Microsemi PPG.

The absolute maximum ratings of the 0150SC-1250M can be summarized as:(1)Drain-Source (VDSS): 250 V;(2)Gate-Source (VGS): -1V;(3)Drain Current (Idg): 35 A;(4)Storage Temperature: -65 to +150°C;(5)Operating Junction Temperature: +250°C.

The electrical characteristics of 0150SC-1250M can be summarized as:(1)Drain-Source Leakage Current: 750 A;(2)Gate-Source Leakage Current: 50 A;(3)Thermal Resistance: 0.15 ºC/W;(4)Common Gate Power Gain: 9.0 to 9.5 dB;(5)Input Power: 150 to 160 W;(6)Drain Efficiency: 60 %;(7)Load Mismatch: 10:1;(8)Power Output - Higher Drive: 1400 W;(9)Source-Gate Voltage: 3.0 to 10.0 Volts. If you want to know more information such as the electrical characteristics about the 0150SC-1250M, please download the datasheet in www.seekic.com or www.chinaicmart.com.