0405-1000M

SpecificationsMaximum Power Dissipation @ 2511400 WattsMaximum Voltage and CurrentBVces Collector to Emitter Voltage 85 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 70 AmpsMaximum TemperaturesStorage Temperature - 65 to + 200Operating Junction Temperature + 200DescriptionThe 04...

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0405-1000M Picture
SeekIC No. : 004205683 Detail

0405-1000M: SpecificationsMaximum Power Dissipation @ 2511400 WattsMaximum Voltage and CurrentBVces Collector to Emitter Voltage 85 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 70 AmpsMaximu...

floor Price/Ceiling Price

Part Number:
0405-1000M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2020/4/1

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Product Details

Description



Specifications

Maximum Power Dissipation @ 251 1400 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 85 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 70 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200
Operating Junction Temperature + 200



Description

The 0405-1000M is an internally matched, COMMON EMITTER transistor capable of providing 1000 Watts of pulsed RF output power in a push-pull configuration at three hundreds microsecond pulse width ten percent duty factor across the frequency band 400-450 MHz. This hermetically sealed transistor is specifically designed for medium pulse radar applications. The 0405-1000M utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness.




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