100BGQ100

Series: -
Manufacturer: Vishay Semiconductors
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Reverse Recovery Time (trr): -
Capacitance @ Vr, F: -
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Packaging: Bulk
Mounting Type: Through Hole, Radial
Package / Case: PowerTab?, PowIRtab?
Supplier Device Package: PowIRtab?
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.04V @ 100A
Current - Reverse Leakage @ Vr: 300µA @ 100V


Features:

· 175°C TJ operation
· High Frequency Operation
· Low forward voltage drop
· Continuous High Current operation
· Guard ring for enhanced ruggedness and long term
· reliability




Specifications

Parameters	100BGQ	Units	Conditions
IF(AV) Max. Average Forward Current	100	A	50% duty cycle @ TC = 100°C, rectangular wave form
IF(RMS) RMS Forward Current	141	A	TC = 95°C
IFSM Max. Peak One Cycle Non-Repetitive SurgeCurrent	6300	A	5s Sine or 3s Rect. pulse	Following any rated load condition and with rated VRRM applied
	800		10ms Sine or 6ms Rect. pulse
EAS Non-RepetitiveAvalancheEnergy	9	mJ	TJ = 25 °C, IAS = 6 Amps, L = 2.0 mH
IAR Repetitive Avalanche Current	2	A	Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical

Description

This NEW Schottky rectifier 100BGQ100 has been optimized for low reverse leakage at high temperature

The proprietary barrier technology allows for reliable operation up to 175°C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems.