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Description: The 1011LD300 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 300 Wp...


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1011LD300 General Description


The 1011LD300 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 300 Wpk of RF power from 1030 to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.

1011LD300 Maximum Ratings

Power Dissipation
Device Dissipation @25 (Pd)                   1590 W
Voltage and Current
Drain-Source (VDSS)                                        75V
Gate-Source (VGS)                                       ± 20V
Temperatures
Storage Temperature                       -65 to +150
Operating Junction Temperature                 +200

1011LD300 datasheet

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