10CTQ150PBF

Series: -
Manufacturer: Vishay Semiconductors
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Reverse Recovery Time (trr): -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Packaging: Tube
Current - Average Rectified (Io) (per Diode): 5A
Voltage - DC Reverse (Vr) (Max): 150V
Voltage - Forward (Vf) (Max) @ If: 930mV @ 5A
Current - Reverse Leakage @ Vr: 50µA @ 150V


Features:

`175 T<sub>J</sub> operation
`Center tap configuration
`Low forward voltage drop
`High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
`High frequency operation
`Guard ring for enhanced ruggedness and long term reliability
`Lead-Free ("PbF" suffix)




Specifications

Parameters	Values	Units	Conditions
IF(AV) Max. Average Forward (Per Leg)Current * See Fig. 5 (Per Device)	5	A	50% duty cycle @ TC=155, rectangular wave form
	10
IFSM Max. Peak One Cycle Non-Repetitive Surge Current (Per Leg) * See Fig. 7	620	A	5s Sine or 3s Rect. pulse	Following any ated load condition and with rated VRRM applied
	115		10ms Sine or 6ms Rect. pulse
EAS Non-Repetitive Avalanche Energy (Per Leg)	6.75	mJ	TJ=25, IAS=0.30 Amps, L=150 mH
IAR Repetitive Avalanche Current (Per Leg)	0.30	A	Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA=1.5 x VR typical

Description

reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175junction temperature. Typical applications of 10CTQ150PbF are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.