MFG:FSC Package Cooled:TO220F D/C:07+
MFG: FSC
Package Cooled: TO220F
D/C: 07+
Description: The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics...
The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
| PARAMETER | SYMBOL | RATINGS | UNIT |
| Drain to Source Voltage 10N60-A 10N60-B Gate to Source Voltage Avalanche Current (Note 1) Continuous Drain Current TC = 25 TC = 100 |
VDSS VGSS IAR ID |
600 650 ±30 9.5 9.5 3.3 |
V V A A |
| Pulsed Drain Current (Note 1) Power Dissipation Junction Temperature Operating Temperature Storage Temperature |
IDM PD TJ TOPR Tstg |
38 156 +150 -55 ~ +150 -55 ~ +150 |
A W |
| Peak Diode Recovery dv/dt (Note 3) Avalanche Energy Single Pulsed (Note 2) Avalanche EnergyRepetitive (Note 1) |
dv/dt EAS EAR |
4.5 700 15.6 |
V/ns mJ mJ |
10N60C
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