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Part Number: 10TTS08PbF

 

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Description: The 10TTS08PbF High Voltage Series of silicon controlled rectifiers are specifically designed for medi...


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10TTS08PbF General Description


The 10TTS08PbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 junction temperature.

Typical applications are in input rectification and crow-bar (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. Also available in SMD-220 package (series 10TTS08SPbF). This product has been designed and qualified for industrial level and lead (Pb)-free ("PbF" suffix).

10TTS08PbF Maximum Ratings

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current

Maximum RMS on-state current

IT(AV)

IT(TRMS)

TC = 112 , 180° conduction, half sine wave 6.5

10
A
Maximum peak, one-cycle,
non-repetitive surge current
ITSM 10 ms sine pulse, rated VRRM applied, TJ = 125

10 ms sine pulse, no voltage reapplied, TJ = 125
120

140
Maximum I2t for fusing I2t 10 ms sine pulse, rated VRRM applied, TJ = 125

10 ms sine pulse, no voltage reapplied, TJ = 125
72

100
A2s
Maximum I2t for fusing

Maximum on-state voltage drop
I2t

VTM
t = 0.1 to 10 ms, no voltage reapplied

10 A, TJ = 25
1000

1.15
A2s

V
On-state slope resistance

Threshold voltage
rt

VT(TO)
TJ = 125 17.3

0.85
m

V
Maximum reverse and direct leakage current IRM/IDM TJ = 25

TJ = 125
VR = Rated VRRM/VDRM 0.05

1.0
mA
Holding current
Maximum latching current
IH

IL
Anode supply = 6 V, resistive load, initial IT = 1A

Anode supply = 6 V, resistive load
30
50
Maximum rate of rise of off-state voltage

Maximum rate of rise of turned-on current
dV/dt

dI/dt
TJ = 25

150

100
V/s

A/s

10TTS08PbF datasheet

10TPB100M
PDF/DataSheet Download

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