1214-150L

SpecificationsMaximum Power DissipationDevice Dissipation @251 ........................................320 WMaximum Voltage and CurrentCollector to Base Voltage (BVces) ................................70 VEmitter to Base Voltage (BVebo) .................................3.5 VCollector Current (Ic) ...

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SeekIC No. : 004208552 Detail

1214-150L: SpecificationsMaximum Power DissipationDevice Dissipation @251 ........................................320 WMaximum Voltage and CurrentCollector to Base Voltage (BVces) ................................

floor Price/Ceiling Price

Part Number:
1214-150L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/1

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Product Details

Description



Specifications

Maximum Power Dissipation
Device Dissipation @251 ........................................320 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) ................................70 V
Emitter to Base Voltage (BVebo) .................................3.5 V
Collector Current (Ic) ...................................................15 A
Maximum Temperatures
Storage Temperature ...................................-65 to +200
Operating Junction Temperature .............................+200



Description

The 1214-150L is an internally matched, COMMON BASE transistor capable of providing 150 Watts of pulsed RF output power at 5 milliseconds pulse width, 20% duty factor across the band 1200 to 1400 MHz.

The 1214-150L is specifically designed for L-Band radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness.




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