123NQ080

Series: -
Manufacturer: Vishay Semiconductors
Speed: Fast Recovery = 200mA (Io)
Mounting Type: Chassis Mount
Reverse Recovery Time (trr): -
Diode Type: Schottky
Current - Average Rectified (Io) (per Diode): 120A
Packaging: Bulk
Diode Configuration: Single
Package / Case: D-67 HALF-PAK
Supplier Device Package: HALF-PAK
Voltage - Forward (Vf) (Max) @ If: 910mV @ 120A
Voltage - DC Reverse (Vr) (Max): 80V
Current - Reverse Leakage @ Vr: 3mA @ 80V


Features:

· 175° C TJ operation
· Unique high power, Half-Pak module
· Replaces two parallel DO-5's
· Easier to mount and lower profile than DO-5's
· High purity, high temperature epoxy encapsulation for
· enhanced mechanical strength and moisture resistance
· Low forward voltage drop
· High frequency operation
· Guard ring for enhanced ruggedness and long term
· reliability


Specifications

Parameters	111CNQ	Units	Conditions
IF(AV) Max. Average Forward Per Leg Current * See Fig. 5 Per Device	120	A	50% duty cycle @ TC = 152 °C, rectangular wave form
IFSM Max. Peak One Cycle Non-Repetitive Surge Current (Per Leg) * See Fig. 7	16000	A	5s Sine or 3s Rect. pulse	Following any rated load condition and with rated VRRM applied
	2100		10ms Sine or 6ms Rect. pulse
EAS Non-Repetitive Avalanche Energy (Per Leg)	15	mJ	TJ = 25 °C, IAS = 8 Amps, L = 1.7 mH
IAR Repetitive Avalanche Current (Per Leg)	1	A	Current decaying linearly to zero in 1 sec Frequency limited by TJ max. VA = 1.5 x VR typical

Description

The 123NQ080 high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175° C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.