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128N15

Features: International standard packageLow RDS (on) HDMOSTM processRugged polysilicon gate cell structureFast switching timesApplicationMotor controlsDC choppersSwitched-mode power suppliesSpecifications Symbol Test Conditions Maximum Ratings VDSSVDGR TJ = 25 to 150T = 25 to ...

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SeekIC No. : 004209087 Detail

128N15: Features: International standard packageLow RDS (on) HDMOSTM processRugged polysilicon gate cell structureFast switching timesApplicationMotor controlsDC choppersSwitched-mode power suppliesSpecific...

128N15 Data Sheet

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Part Number:
128N15
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

International standard package
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Fast switching times


Application

Motor controls
DC choppers
Switched-mode power supplies


Specifications

Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25 to 150
T = 25 to 150; RGS = 1 M
150
150
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
ID(RMS)
IDM
IAR
TC = 25°C MOSFET chip capability
External lead current limit
TC = 25°C, pulse width limited by TJM
T = 25°C
128
75
512
90
A
A
A
EAR
EAS
TC = 25
60
2.5
mJ
mJ
dv/dt
IS IDM, di/dt 100 A/s, VDD VDSS,
TJ150, RG = 2
5
V/ns
PD
TC = 25
540
W
TJ
TJM
Tstg
-55 to +150
150
-55 to +150


TL
1.6 mm (0.063 in) from case for 10 s
300
Md
Mounting torque (TO-220)
0.7/6
Nm/lb.in.
Weight
TO-264
10
g



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