Position: Home  > All Categories> Integrated Circuits (ICs) > 12N70

12N70

Features: * RDS(ON) = 0.7 @VGS = 10 V* Ultra low gate charge ( typical 42 nC )* Low reverse transfer capacitance ( CRSS = typical 25 pF )* Fast switching capability* Avalanche energy specified* Improved dv/dt capability, high ruggednessSpecifications Symbol PARAMETER Rating Unit VDSS D...

product image

12N70 Picture
See larger image
SeekIC No. : 004209158 Detail

12N70: Features: * RDS(ON) = 0.7 @VGS = 10 V* Ultra low gate charge ( typical 42 nC )* Low reverse transfer capacitance ( CRSS = typical 25 pF )* Fast switching capability* Avalanche energy specified* Impr...

12N70 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
12N70
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

* RDS(ON) = 0.7 @VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


Specifications

Symbol PARAMETER Rating Unit
VDSS Drain-Source Voltage 700 V
VGSS Gate-source voltage ±30
 V
ID Continuous Drain Current 12 A
IDM Pulsed Drain Current (Note 1) 48 A
EAS Avalanche Energy Single Pulsed (Note 2) 790 mJ
EAR Repetitive (Note 1) 24 mJ
IAR Avalanche Current (Note 1) 12 A
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
TJ Junction Temperature +150
TOPR Operating Temperature -55 ~ +150
Tstg Storage temperatur -55 ~ +150


Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.




Description

The UTC 12N70 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC's proprietary, planar stripe, DMOS technology.

The 12N70 is suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Resistors
A101G
3006P-1-205LF
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
LED Products
LM24P20
KCG057QV1DB-G770
Transformers
TM-09210
BV222-1-00992
View more