160-0055P3

Features: • MOSFETs in trench technology:- low RDSon- optimized intrinsic reverse diode• package:- high level of integration- high current capability- auxiliary terminals for MOSFET control- terminals for soldering or weldingconnections- isolated DCB ceramic base platewith optimized he...

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SeekIC No. : 004210782 Detail

160-0055P3: Features: • MOSFETs in trench technology:- low RDSon- optimized intrinsic reverse diode• package:- high level of integration- high current capability- auxiliary terminals for MOSFET cont...

floor Price/Ceiling Price

Part Number:
160-0055P3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/4/27

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Product Details

Description



Features:

• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or weldingconnections
- isolated DCB ceramic base platewith optimized heat transfer



Application

AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment



Specifications

  MOSFETs      
Symbol
Conditions
Maximum
Ratings
VDSS
TVJ = 25 to 150
55
V
VGS
rating
±20
V
ID25
ID90
TC = 25TC = 90
160
120
A
A
IF25
IF90
TC = 25 (diode)
TC = 90(diode)
135
90
A
A



Description

with Trench MOSFETsin 160-0055P3 DCB isolated high current package


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