1900-70M

1900-70M is a kind of NPN power switching transistor.The typical applications include inverters,switching regulators,motor controls and solenoid driver.

Here you can get some information about the features of 1900-70M.First is NPN planar epitaxial power transistor.The second is about the contact metallization.The base and emitter is aluminum and the collector is alloy gold suitable for euectic mount.Then is complementary PNP:OTC1550 Type.The last one is about the dimensions.The die size is 0.136*0.136*0.010 inch;the emitter bond area (E) is 0.095*0.012 inch;the base bond area (B) is 0.110*0.007 inch.

What comes next is about the electrical characteristics of 1900-70M at 25.The minimum BV_CBO (collector emitter) is 100 Vdc at I_C=100A.The minimum BV_CEO (collector emitter) is 70 Vdc at I_C=30 mA.The maximum I_CEX (collector emitter cutoff) is 1.0 mA at V_CE=90 V,V_BE=-0.5 V.The maximum I_CEX (collector cutoff) is 1.0 mA at V_CE=90 V,V_BE=-0.5 V.The maximum I_CEX (collector cutoff) is 10 mA at V_CE=90 V,V_BE=-0.5 V,T_j=150.The maximum I_EBO (emitter cutoff) is 10A at V_EB=5 V.The minimum h_FE (DC current gain) is 100 at I_C=1 A,V_CE=5 V.The minimum h_FE (DC current gain) is 80 and the maximum is 170 at I_C=5 A,V_CE=5 V.The minimum h_FE (DC current gain) is 15 at I_C=10 A,V_CE=5 V.The maximum V_CE(sat) (collector saturation) is 0.3 Vdc at I_C=3 A,I_B=0.15 A.The maximum V_BE(sat) (emitter base saturation) is 1.5 Vdc at I_C=3 A,I_B=0.15 A.The maximum T_on (t_d+t_r) is 200 ns and the maximum T_off (t_s+t_f) is 900 ns at V_C=30 V,I_C=1 A,I_B1=I_B2=0.05 A.The maximum C_OB (output capacitance) is 300 pF at V_CB=-10 V,f=1 MHz.The minimum f_t (small signal current gain) is 10 at I_C=500 mA,V_CE=6 V,f=10 MHz.