1N23WG

Features: • High burnout resistance• Low noise figure• Hermetically sealed package• Matched pairs available by adding suffix M or MR for matched forward and reverseSpecifications IF 20mA VR 1.0V PDISS 2.0 (ERGS) @ TC = 25 °C TJ -55 to +...

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SeekIC No. : 004212589 Detail

1N23WG: Features: • High burnout resistance• Low noise figure• Hermetically sealed package• Matched pairs available by adding suffix M or MR for matched forward and reverseSpecif...

floor Price/Ceiling Price

Part Number:
1N23WG
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Features:

• High burnout resistance
• Low noise figure
• Hermetically sealed package
• Matched pairs available by adding suffix "M" or "MR" for matched forward and reverse



Specifications

IF
20mA
VR
1.0V
PDISS
2.0 (ERGS) @ TC = 25 °C
TJ
-55 to +150
TSTG
-55 to +150



Description

The ASI 1N23WG is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz.


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