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Part Number: 1N6073
Description: This "Ultrafast Recovery" rectifier diode series is military qualified to MIL-PRF-19500/503 and is ide...
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1N6073
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DataSheet
General Description
1N6073 General Description
This "Ultrafast Recovery" rectifier diode series is military qualified to MIL-PRF-19500/503 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3, 6, and 12 Amp rated rectifiers (TL =70) in different package sizes for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using an internal "Category I" metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a "US" suffix (see separate data sheet for 1N6073US thru 1N6081US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.
1N6073 Maximum Ratings
• Junction Temperature: -65 to +155
• Storage Temperature: -65 to +155
• Peak Forward Surge Current @ 25: 35 Amps for 1N6073-6075, 75 Amps for 1N6076-6078, and 175 Amps for 1N6079-6081 at 8.3 ms half-sine wave
• Average Rectified Forward Current (IO) at TL= +70 (L= 0 inch from body):
1N6073 thru 1N6075: 3.0 Amps
1N6076 thru 1N6078: 6.0 Amps
1N6079 thru 1N6081: 12.0 Amps
Average Rectified Forward Current (IO) at TA=55:
1N6073 thru 1N6075: 0.85 Amps
1N6076 thru 1N6078: 1.3 Amps
1N6079 thru 1N6081: 2.0 Amps
• Thermal Resistance L= 0 inch (RJL): 13/W for 1N6073-6075, 8.5/W for 1N6076-6078, and 5.0/W for 1N6079-6081
• Solder temperature: 260 for 10 s (maximum)
• Storage Temperature: -65 to +155
• Peak Forward Surge Current @ 25: 35 Amps for 1N6073-6075, 75 Amps for 1N6076-6078, and 175 Amps for 1N6079-6081 at 8.3 ms half-sine wave
• Average Rectified Forward Current (IO) at TL= +70 (L= 0 inch from body):
1N6073 thru 1N6075: 3.0 Amps
1N6076 thru 1N6078: 6.0 Amps
1N6079 thru 1N6081: 12.0 Amps
Average Rectified Forward Current (IO) at TA=55:
1N6073 thru 1N6075: 0.85 Amps
1N6076 thru 1N6078: 1.3 Amps
1N6079 thru 1N6081: 2.0 Amps
• Thermal Resistance L= 0 inch (RJL): 13/W for 1N6073-6075, 8.5/W for 1N6076-6078, and 5.0/W for 1N6079-6081
• Solder temperature: 260 for 10 s (maximum)
1N6073 Features
• Popular JEDEC registered 1N6073 to 1N6081 series
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal "Category I" Metallurgical bonds
• JAN, JANTX, and JANTXV available for 1N6074 and 1N6075 per MIL-PRF-19500/503
• Further options for screening in accordance with MIL-PRF-19500 for JAN, JANTX, JANTXV, or JANS by using a MQ, MX, MV or MSP prefix respectively , e.g. MX6076, MV6079, MSP6081, etc.
• Surface mount equivalents also available in a square end-cap MELF configuration with "US" suffix
1N6073 Typical Application
• Ultrafast recovery rectifier series 50 to 150 V
• Military and other high-reliability applications
• Switching power supplies or other applications requiring extremely fast switching & low forward loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power capability
• Inherently radiation hard as described in Microsemi MicroNote 050
• Military and other high-reliability applications
• Switching power supplies or other applications requiring extremely fast switching & low forward loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power capability
• Inherently radiation hard as described in Microsemi MicroNote 050
1N6073
PDF/DataSheet Download
- Datasheet: 1N6073
- File Size: 72292 KB
- Manufacturer: MICROSEMI [Microsemi Corporation]
- Click here to Download
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