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1N6625US

Features: • Surface mount series equivalent to the JEDEC registered 1N6620 to 1N6625 series• Voidless hermetically sealed glass package• Extremely robust construction• Triple-layer passivation• Internal Category I Metallurgical bonds• JAN, JANTX, and JANTXV av...

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1N6625US: Features: • Surface mount series equivalent to the JEDEC registered 1N6620 to 1N6625 series• Voidless hermetically sealed glass package• Extremely robust construction• Triple...

1N6625US Data Sheet

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Part Number:
1N6625US
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Surface mount series equivalent to the JEDEC registered 1N6620 to 1N6625 series
• Voidless hermetically sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal "Category I" Metallurgical bonds
• JAN, JANTX, and JANTXV available per MIL-PRF- 19500/585
• Further options for screening in accordance with MILPRF- 19500 for JANS by using a "MSP" prefix, e.g. MSP6620US, MSP6624US, etc.
• Axial-leaded equivalents also available (see separate data sheet for 1N6620 thru 1N6625)


Application

• Ultrafast recovery rectifier series 200 to 1000 V
• Military and other high-reliability applications
• Switching power supplies or other applications requiring extremely fast switching & low forward loss
• High forward surge current capability
• Low thermal resistance
• Controlled avalanche with peak reverse power capability
• Inherently radiation hard as described in Microsemi MicroNote 050


Specifications

• Junction Temperature: ............................   -65oC to +175
• Storage Temperature:............................    -65oC to +175
• Peak Forward Surge Current @ 25: ..  20 Amps (except 1N6625 which is 15 Amps)
   Note: ...........................T est pulse = 8.3 ms, half-sine wave.
• Average Rectified Forward Current (IO) at TEC=+110:
   1N6620 thru 1N6622: .................................   2.0 Amps
   1N6623 thru 1N6625:....    1.5 Amps (Derate linearly at 1.5%/oC for TEC > +110)
• Average Rectified Forward Current (IO) at TA=25:
   1N6620 thru 1N6622: .................................. 1.2 Amps
   1N6623 thru 1N6625: ...................................1.0 Amp
   (Derate linearly at 0.67%/ for TA>+25. This IOrating is typical for PC boards where thermalresistancefrom         mounting point to ambient is sufficiently controlledwhere TJ(max) is not exceeded.)
• Thermal Resistance junction to endcap (RJEC):................... 20/W
• Capacitance at VR= 10 V: .................................. 10 pF
• Solder temperature: ........................  260oC for 10 s (maximum)


Description

This "Ultrafast Recovery" rectifier diode series is military qualified to MIL-PRF- 19500/585 and is ideal for high-reliability applications of the 1N6625US where a failure cannot be tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working
peak reverse voltages of the 1N6625US from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal "Category I" metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting (see separate data sheet for 1N6625US).

Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.




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