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Description: Two high-speed switching diodes inplanar technology, with differentconfigurations, in an ultra smallSC-89 (SOT490) plas...


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1PS89SS06 General Description


Two high-speed switching diodes inplanar technology, with differentconfigurations, in an ultra smallSC-89 (SOT490) plastic SMDpackage.

1PS89SS06 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRRM repetitive peak reverse voltage   - 85 V
VR continuous reverse voltage   - 80 V
IF continuous forward current
Tamb = 25 °C; note 1; see Fig.5
single diode loaded
both diodes loaded

-

-

200

125

mA

mA
IFRM repetitive peak forward current   - 500 mA
IFSM non-repetitive peak forward current
square wave; Tj = 25 °C prior to
surge; see Fig.7
t = 1 ms
t = 1 s

-

-

4

0.5

A

A
Ptot total power dissipation Tamb 25 °C; note 1 - 250 mW
Tstg storage temperature   -65 +150 °C
Tj junction temperature   - +150 °C

1PS89SS06 Features

· Power dissipation comparable toSOT23
· Ultra small plastic SMD package
· High switching speed: max. 4 ns
· Continuous reverse voltage:max. 80 V
· Repetitive peak reverse voltage:max. 85 V
· Repetitive peak forward current:max. 500 mA.

1PS89SS06 Typical Application

· High speed switching in e.g.surface mounted circuits.

1PS89SS06 datasheet

1PS89SS06
PDF/DataSheet Download

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