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- Table of contents:
1SS133
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Suppliers
DataSheet
General Description
1SS133 Maximum Ratings
Peak reverse voltage ...........................................VRM 90 V
DC reverse voltage ................................................VR 80 V
Peak forward current .......................................IFM 400 mA
Mean rectifying current ......................................IO 130 mA
Surge current (1s) .......................................Isurge 600 mA
Power dissipation ............................................PD 300 mW
Junction temperature .........................................Tj 175 °C
Storage temperature ............................Tstg -65~+175 °C
DC reverse voltage ................................................VR 80 V
Peak forward current .......................................IFM 400 mA
Mean rectifying current ......................................IO 130 mA
Surge current (1s) .......................................Isurge 600 mA
Power dissipation ............................................PD 300 mW
Junction temperature .........................................Tj 175 °C
Storage temperature ............................Tstg -65~+175 °C
1SS133 Features
Glass sealed envelope. (MSD)
High speed. (trr=1.2ns Typ.)
High reliability.
High speed. (trr=1.2ns Typ.)
High reliability.
1SS133 Typical Application
High speed switching
1SS133
PDF/DataSheet Download
- Datasheet: 1SS133
- File Size: 55761 KB
- Manufacturer: ROHM [Rohm]
- Click here to Download
- ·1SS104
- TOSHIBA [Toshiba Semiconductor]
- SILICON PLANAR TYPE DIODE
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- ·1SS106
- HITACHI [Hitachi Semiconductor]
- Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
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- ·1SS108
- HITACHI [Hitachi Semiconductor]
- Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
- 18190 KB
- ·1SS110
- HITACHI [Hitachi Semiconductor]
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- 17399 KB
- ·1SS118
- HITACHI [Hitachi Semiconductor]
- Silicon Epitaxial Planar Diode for High Speed Switching
- 17939 KB
- ·1SS119
- HITACHI [Hitachi Semiconductor]
- Silicon Epitaxial Planar Diode for High Speed Switching
- 28105 KB
- ·1SS120
- HITACHI [Hitachi Semiconductor]
- Silicon Epitaxial Planar Diode for High Speed Switching
- 28393 KB
- ·1SS123
- NEC [NEC]
- SILICON SWITCHING DIODE
- 211346 KB
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