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MFG:TOSHIBA

MFG:TOSHIBA

| Characteristic | Symbol | Rating | Unit |
| Maximum (peak) reverse voltage | VRM | 85 | V |
| Reverse voltage | VR | 80 | V |
| Maximum (peak) forward current | IFM | 300* | mA |
| Average forward current | IO | 100* | mA |
| Surge current (10ms) | IFSM | 2* | A |
| Power dissipation | P | 100 | mW |
| Junction temperature | Tj | 125 | |
| Storage temperature | Tstg | -55~125 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
* Unit rating. Total rating = unit rating * 1.5
1SS361
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