Purchase 1SS361FV, In-stock 1SS361FV From SeekIC.
- Table of contents:
1SS361FV
-
Suppliers
DataSheet
General Description
1SS361FV Maximum Ratings
| Characteristic | Symbol | Rating | Unit |
| Maximum (peak) reverse voltage | VRM | 85 | V |
| Reverse voltage | VR | 80 | V |
| Maximum (peak) forward current | IFM | 300* | mA |
| Average forward current | IO | 100* | mA |
| Surge current (10ms) | IFSM | 2* | A |
| Power dissipation | P | 150* | mW |
| Junction temperature | Tj | 150 | |
| Storage temperature range | Tstg | -55~150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating * 1.5
** : Mounted on an FR4 board (25.4 mm * 25.4 mm * 1.6 mmt)
1SS361FV Typical Application
·Small package
·Excellent in forward current and forward voltage characteristics : VF (3) = 0.9 V (typ.)
·Fast reverse recovery time : trr = 1.6 ns (typ.)
·Small total capacitance : CT = 0.9 pF (typ.)
·Excellent in forward current and forward voltage characteristics : VF (3) = 0.9 V (typ.)
·Fast reverse recovery time : trr = 1.6 ns (typ.)
·Small total capacitance : CT = 0.9 pF (typ.)
1SS104
PDF/DataSheet Download
- Datasheet: 1SS104
- File Size: 69893 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
- ·1SS106
- HITACHI [Hitachi Semiconductor]
- Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
- 27324 KB
- ·1SS108
- HITACHI [Hitachi Semiconductor]
- Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
- 18190 KB
- ·1SS110
- HITACHI [Hitachi Semiconductor]
- Silicon Epitaxial Planar Diode for Tuner Band Switch
- 17399 KB
- ·1SS118
- HITACHI [Hitachi Semiconductor]
- Silicon Epitaxial Planar Diode for High Speed Switching
- 17939 KB
- ·1SS119
- HITACHI [Hitachi Semiconductor]
- Silicon Epitaxial Planar Diode for High Speed Switching
- 28105 KB
- ·1SS120
- HITACHI [Hitachi Semiconductor]
- Silicon Epitaxial Planar Diode for High Speed Switching
- 28393 KB
- ·1SS123
- NEC [NEC]
- SILICON SWITCHING DIODE
- 211346 KB
- ·1SS133
- ROHM [Rohm]
- Switching diode
- 55761 KB
1SS361FV Relative Products
1SS361F
The 1SS361F is a kind of diode silicon epitaxial planar type. It is intended for ultra high speed switching applications. The features of the 1SS361F areas follows: (1)small package: 1608 flat lead; (2)wexcellent in forward current and forward voltage charac...
1SS361
1SS360
1SS358
1SS357
1SS356WS
The IC part 1SS356WS has two features: 1.Small surface mounted type; 2.High reliability. And it could be used in High frequency switching. Here are some Absolute Maximum Ratings of the 1SS356WS when Ta = 25°C: 1.Reverse Voltage (VR) is 35 V; 2.Forward Curre...
Hotspot Suppliers Product
TL061CDR
Price: 0.2-0.4 USD
JFET-input operational amplifier , 1MHZ, low power, SOP8, wide bandwidth, high slew rate
LM2676SX-ADJ - LABLE
Price: 0.1-3 USD
regulator, 3A, -0.3V to 14V
TM55DZ-H
Price: 0.1-100 USD
thyristor modules, medium power, general use insulated type
TMPZ84C011AF-6
Price: 4.85-6.85 USD
TLCS-Z80 MICROPROCESSOR TMPZ84C011AF-6 - TLCS-Z80 MICROPROCESSOR - Toshiba Semiconductor
OPA335AIDBVR
Price: 1.03-1.12 USD
CMOS operational amplifier, SOT-23, +7V, ±10mA, low offset voltage, single-supply operation
OPA353NA
Price: 0.61-0.71 USD
rail-to-rail CMOS operational amplifier, SOT-23-5, 10mA, high slew rate, low noise
2SD2170
Price: 0.005-0.5 USD
90v, 2A, medium power transistor
K9F4G08U0A-PIB0
Price: 4.8-5 USD
NAND Flash Memory, 512M x 8 Bit, TSOP48, -0.6 to + 4.6 V, cost effective
EKMM181VSN681MN50S
Price: 0.01-100 USD
large capacitance, aluminum electrolytic capacitor, 160 to 450Vdc, Non solvent-proof type, 680uF
XCF5206EFT40
Price: 3.3-3.4 USD
V2CORE 8K SRAM, QFP-160, XCF5206EFT40, Freescale Semiconductor, Inc, 0.34W
PMT809004
Price: 0.1-0.4 USD
GDT circuit protection device, DIP, 1Amp, 10 to 35 Volts, RoHS compliant, Low insertion loss, ther...
MIC2544-1YMM
Price: 1.15-1.36 USD
Programmable Current Limit, High-Side Switch, MOSP-8, 2.7V to 5.5V input, 120mΩ maximum on-resista...
